200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
نویسندگان
چکیده
منابع مشابه
Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)
The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible microRaman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer re...
متن کاملatedA GaN/GaN HEMTs
Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.
متن کاملEnhancement - Mode InAlN / AlN / GaN HEMTs With 10 − 12 A / mm Leakage Current and 10 12 ON / OFF Current Ratio
Postprocessing annealing in forming gas at 400 ◦C was performed on enhancement-mode lattice-matched InAlN/AlN/GaN high-electron-mobility transistors fabricated by selective etch of InAlN under a Pt gate. After postprocessing annealing, the device reverse gate leakage current decreased from 10−7 to 10−12 A/mm at Vgs = −1 V and Vds = 6 V, showing an ON/OFF current ratio of 10 that is the highest ...
متن کاملProcess Variations to Normally-off GaN HEMTs on Si with p-GaN Cap Layer
Effects of process flows and device structures on the electrical properties of enhancement mode high electron mobility transistors (HEMTs) are investigated in this work. Except the demonstration of high threshold voltage (Vth) of 4.3V, the process window of the p-GaN residual thickness to ensure a steady operation current was estimated to be 10±5nm in our case. However, to achieve a high breakd...
متن کاملEnhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 μm-long gate exhibits a threshold voltage of 0.9 V, a kneevoltage of 2.2 V, a maximum drain current density of 310 mA/mm, a pe...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2017
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2017.2703304